Method for manufacturing a buried-gate semiconductor device and corresponding integrated circuit

摘要

The method involves forming a cavity i.e. hollow space, below a semiconductor channel region, and filling the cavity by material e.g. germanium-polysilicon. Aluminum or semiconductor material is contacted with the former material. The former material is replaced by aluminum, or a third material is formed by diffusion of the semiconductor material in the former material. The cavity formation, contacting and replacing stages, and third material forming stage are performed for forming a buried portion of a gate region, where the buried portion includes the aluminum or alloy of materials. An independent claim is also included for a semiconductor device comprising a channel semi-conducting region.