| 摘要 |
<p>A semiconductor device comprising silicon substrate (10) with channel region; gate electrode (32) provided via gate insulation film (26) on the channel region of the silicon substrate (10); a pair of embedded semiconductor regions (58) embedded in the surface side of the silicon substrate (10) on both sides of the gate electrode (32), respectively, and adapted to apply a first-direction stress parallel to the surface of the silicon substrate (10) to the silicon substrate (10); and stressor films (48) provided on the silicon substrate (10) between the channel region and the pair of embedded semiconductor regions (58), respectively, the stressor films in contact with the silicon substrate (10), and adapted to apply a stress in a second direction opposite to the first direction to the silicon substrate (10). Accordingly, the carrier injection rate at an edge area of the channel region having marked influence on the operating speed of MIS transistor can be strikingly increased, thereby attaining an increase of the operating speed of MIS transistor.</p> |
