发明名称 Programmable fuse with silicon germanium
摘要 A programmable fuse and method of formation utilizing a layer of silicon germanium (SiGe) (e.g. monocrystalline) as a thermal insulator to contain heat generated during programming. The programmable fuse, in some examples, may be devoid of any dielectric materials between a conductive layer and a substrate. In one example, the conductive layer serves as programmable material, that in a low impedance state, electrically couples conductive structures. A programming current is applied to the programmable material to modify the programmable material to place the fuse in a high impedance state.
申请公布号 US7575958(B2) 申请公布日期 2009.08.18
申请号 US20050247479 申请日期 2005.10.11
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 HOEFLER ALEXANDER B.;ORLOWSKI MARIUS K.
分类号 H01L21/82 主分类号 H01L21/82
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