发明名称 Non-volatile semiconductor memory device
摘要 The local row decoder includes a first MOS transistor of a first conductivity type having one end connected to the local word line, the other end supplied with a first voltage, and a gate connected to the global word line, and a second MOS transistor of a second conductivity type having one end connected to the local word line, the other end supplied with a second voltage, and a gate connected to the global word line. The global row decoder is capable of independently selecting either a first global word line or a second global word line. The first global word line is connected to the first MOS transistor and the second MOS transistor both connected to any one of the local word lines. The second global word line is connected to the first MOS transistor and the second MOS transistor both connected to another adjacent local word line.
申请公布号 US7577032(B2) 申请公布日期 2009.08.18
申请号 US20070924133 申请日期 2007.10.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UMEZAWA AKIRA
分类号 G11C11/03 主分类号 G11C11/03
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