发明名称 |
Quantum dot laser diode and method of manufacturing the same |
摘要 |
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
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申请公布号 |
US7575943(B2) |
申请公布日期 |
2009.08.18 |
申请号 |
US20060607516 |
申请日期 |
2006.12.01 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM JIN SOO;LEE JIN HONG;HONG SUNG UI;KWACK HO SANG;CHOI BYUNG SEOK;OH DAE KON |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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