| 摘要 |
The present invention provides a thin film pattern forming method capable of forming a thin film pattern having small dimensions at higher precision. A thin film pattern forming method of the invention includes: a step of forming a first thin film on a substrate; a step of forming a bilayer resist pattern; a step of forming a soluble layer as a covering layer; and a step of forming a first thin film pattern by selectively removing the first thin film by dry etching using the bilayer resist pattern as a mask. Since the soluble layer generally and continuously covering the periphery of the bilayer resist pattern and the first thin film in an area other than the area covered with the bilayer resist pattern is formed, deformation of the shape of the bilayer resist pattern can be suppressed at the time of dry etching and a deposition amount of a re-deposit 9 can be also reduced. Consequently, the isolated first thin film pattern having small dimensions and defined by a contour can be formed at higher precision. Further, the first thin film pattern 17 is formed by dry etching and, after that, the bilayer resist pattern covered with the soluble layer is removed by using a solvent which can dissolve both the bilayer resist pattern and the soluble layer. Thus, the first thin film pattern and the bilayer resist pattern can be separated from each other without a hitch.
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