发明名称 |
Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device |
摘要 |
It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate. In the present invention, after forming a base layer 11 (or base pretreatment) which enhances adhesiveness over a substrate in advance and forming an insulating film, a mask having a desired pattern shape is formed, and a desired depression is formed by using the mask. A metal material is filled in the depression having a mask 13 and a sidewall made from an insulating film by a droplet discharge method to form an embedded wiring (a gate electrode, a capacitor wiring, lead wiring or the like. Afterwards, it is flattened by a planarization processing, for example, a press or a CMP processing.
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申请公布号 |
US7575965(B2) |
申请公布日期 |
2009.08.18 |
申请号 |
US20040579443 |
申请日期 |
2004.11.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUWABARA HIDEAKI;YAMAZAKI SHUNPEI;MAEKAWA SHINJI;NAKAMURA OSAMU |
分类号 |
H01L21/84;G02F1/1362;G09G3/32;H01L21/288;H01L21/336;H01L21/768;H01L21/77;H01L27/12;H01L29/423 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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