发明名称 Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device
摘要 It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate. In the present invention, after forming a base layer 11 (or base pretreatment) which enhances adhesiveness over a substrate in advance and forming an insulating film, a mask having a desired pattern shape is formed, and a desired depression is formed by using the mask. A metal material is filled in the depression having a mask 13 and a sidewall made from an insulating film by a droplet discharge method to form an embedded wiring (a gate electrode, a capacitor wiring, lead wiring or the like. Afterwards, it is flattened by a planarization processing, for example, a press or a CMP processing.
申请公布号 US7575965(B2) 申请公布日期 2009.08.18
申请号 US20040579443 申请日期 2004.11.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUWABARA HIDEAKI;YAMAZAKI SHUNPEI;MAEKAWA SHINJI;NAKAMURA OSAMU
分类号 H01L21/84;G02F1/1362;G09G3/32;H01L21/288;H01L21/336;H01L21/768;H01L21/77;H01L27/12;H01L29/423 主分类号 H01L21/84
代理机构 代理人
主权项
地址