发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 A positive resist composition is provided to efficiently cut an acid labile group among chemical amplification type resist materials by very strong sulfonic acid when generating acid by high energy ray irradiation. A positive resist composition comprises a polymer compound (A) containing repeating units represented by chemical formula (a), (b), (c), and (d) as a base resin. In chemical formulas, R^1 independently shows hydrogen atom or methyl group; R^2 shows an acid-labile group; Y is a substituent having a lactone structure; Z is an organic group having a hydroxyl group; R^5, R^6, and R^7 independently, are hydrogen atom or C1-20 linear, branched or cyclic monovalent hydrocarbon group which may contain a hetero atom.
申请公布号 KR20090087829(A) 申请公布日期 2009.08.18
申请号 KR20090011411 申请日期 2009.02.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHSAWA YOUICHI;KINSHO TAKESHI;OHASHI MASAKI;TACHIBANA SEIICHIRO;WATANABE TAKERU;HATAKEYAMA JUN
分类号 G03F7/039 主分类号 G03F7/039
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