| 发明名称 |
Programmable resistance memory element with multi-regioned contact |
| 摘要 |
An electrically programmable memory element comprising a programmable resistance material and an electrical contact. The electrical contact having at least two portion wherein the first portion has a higher resistivity than the second portion.
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| 申请公布号 |
US7576350(B2) |
申请公布日期 |
2009.08.18 |
| 申请号 |
US20040891970 |
申请日期 |
2004.07.15 |
| 申请人 |
OVONYX, INC. |
发明人 |
LOWREY TYLER;HUDGENS STEPHEN J.;KLERSY PATRICK J. |
| 分类号 |
H01L29/02;G11C11/56;H01L27/24;H01L45/00 |
主分类号 |
H01L29/02 |
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