发明名称 |
Dual gate stack CMOS structure with different dielectrics |
摘要 |
Integrated circuit devices include a semiconductor substrate having a first doped region and a second doped region having a different doping type than the first doped region. A gate electrode structure on the semiconductor substrate extends between the first and second doped regions and has a gate insulation layer of a first high dielectric constant material in the first doped region and of a second high dielectric constant material, different from the first high dielectric constant material, in the second doped region. A gate electrode is on the gate insulation layer.
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申请公布号 |
US7576395(B2) |
申请公布日期 |
2009.08.18 |
申请号 |
US20050044968 |
申请日期 |
2005.01.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG HYUNG-SUK;LEE JONG-HO;RHEE HWA-SUNG;CHOI JAE-KWANG |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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