| 摘要 |
A semiconductor device including a resistor device and method of manufacturing the same are provided to simplify the manufacturing process by utilizing the process of forming the structure of the cell region. The first dielectric film pattern(110) and the first conductive film pattern(120) having the first width on the active region are formed. The second dielectric film pattern(130) and second conductive film pattern(140) having a smaller width than the first conductive film pattern are formed. One or more impurity regions(150,155) is formed on the substrate(100) which is adjacent to the first dielectric film pattern. The isolation structure putting on the first dielectric film pattern, the first conductive film pattern, and the second dielectric film pattern and the second conductive film pattern is formed on the top of the substrate.
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