| 发明名称 |
Buried layer and method |
| 摘要 |
A high resistivity silicon for RF passive operation including CMOS structures with implanted CMOS wells and a buried layer under the wells formed by deep implants during well implantations.
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| 申请公布号 |
US7575969(B2) |
申请公布日期 |
2009.08.18 |
| 申请号 |
US20010798106 |
申请日期 |
2001.03.02 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LEIPOLD DIRK |
| 分类号 |
H01L21/8238;H01L21/02;H01L27/06 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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