发明名称 |
Method of forming pattern |
摘要 |
Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.
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申请公布号 |
US7575855(B2) |
申请公布日期 |
2009.08.18 |
申请号 |
US20050145535 |
申请日期 |
2005.06.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOH CHA-WON;WOO SANG-GYUN;YEO GI-SUNG;JUNG MYOUNG-HO |
分类号 |
G03F1/00;G03F7/00;G03F7/075;G03F7/11;G03F7/40;H01L21/027;H01L21/033;H01L21/311 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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