| 摘要 |
The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.
|
