SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND PROCESS OF CHEMICAL MECHANICAL POLISHING

摘要

A slurry composition for chemical mechanical polishing is provided to remarkably improve selectivity with SiN. A slurry composition for chemical mechanical polishing comprises abrasive 0.01-1 weight% which is metal oxide, an oxidizing agnet 0.5-5 weight%, a first polishing inhibitor 0.001-10 weight%, a second polishing inhibitor 0.001-10 weight%, a dispersing stabilizer 0.001-10 weight% and solvent of remaining amount. The first polishing inhibitor is phosphate consisting of at least one phosphate group(PO_4^3-) or monohydrogen phosphate group(HPO_4^2-). The second polishing inhibitor is C2-10 hydrocarbon compound consisting of a sulfone group(-SO3H) and a sulfonate group(-OSO3H).