| 摘要 |
An electrostatic discharge circuit is provided to steadily protect the internal circuit of the semiconductor device from the static electricity by lowering the operation onset voltage of the transistor element. The driver circuit(100) and receiver circuit(400) are electrically connected through the signal line(200). The bidirectional power source clamping circuitry(205) for the static electricity current discharge is prepared between the ground voltage platform(VSS1) and ground voltage platform(VSS2) of the different level. The clamp transistor(320) for receiver comprises the clamping circuitry(300) for receiver connected with the gate of the receiver transistor(440) in parallel. The power source clamp transistor(166) is connected to the power voltage terminal(VCC1).
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