| 摘要 |
An ion injection method and an apparatus are provided to improve the treatment quantity by making the frequency of scan collection of substrate to the even number. An ion implantation apparatus comprises a control device(30) having the computation performing control function and a beam current measurement apparatus(32) measuring the beam current of the ion beam(4). The standards scan speed used for the scan collection computation of the substrate, the beam current of the ion beam, and the dose amount about the substrate(2) are provided to the control device. The beam current measurement apparatus is the faraday cup. The beam current measurement apparatus measures the beam current by accepting the ion beam performing the ion implantation to substrate. The control device controls a scan device(18) comprising the substrate drive unit, a twist motor(14) and a tilt motor(16).
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