| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a deep trench structure for effectively isolating heavily doped wells of neighboring elements from each other at a high operating voltage. SOLUTION: The semiconductor device with the deep trench structure includes a semiconductor substrate in which a first conductivity type well and a second conductivity type well having opposite types are formed, a gate oxide film and a gate electrode laminated on each of the first conductivity type well and the second conductivity type well, second conductivity type drift regions formed under both sides of the gate electrode in the first conductivity type well, first conductivity type drift regions formed under both sides of the gate electrode in the second conductivity type well, and a first element isolation layer having a trench structure deeper than the first and the second conductivity type wells in order to isolate the first conductivity type well and the second conductivity type well from each other. COPYRIGHT: (C)2009,JPO&INPIT
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