| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device preventing malfunction of a memory cell due to interference between memory cells adjacent to each other. SOLUTION: The method of manufacturing a semiconductor device includes steps of: forming a plurality of floating gate electrodes 10a each having an upper part and a portion of a side part in a channel width direction exposed by interposing a tunnel insulating film on a semiconductor substrate; forming a first insulating film 109a becoming the lowest layer of an inter-electrode insulating film on each floating gate electrode 103a by chemically reacting an exposed surface layer part of the floating gate electrode 103a, and reducing the width in the channel width direction of the upper part of each floating electrode 103a relative to the width in the channel width direction of the lower part of the floating gate electrode 103a at the same time; and forming a control gate electrode partially embedded between the floating electrodes 103a facing each other on the inter-electrode insulating film 109a. COPYRIGHT: (C)2009,JPO&INPIT
|
