| 摘要 |
PROBLEM TO BE SOLVED: To form a pattern which is finer than maximum resolution of exposure apparatus. SOLUTION: In a method of forming patterns of a semiconductor element, first etching mask patterns are formed over a semiconductor substrate. An auxiliary film is formed over the first etching mask patterns to a thickness with which a step corresponding to the first etching mask patterns can be maintained. Second etching mask patterns are formed in spaces defined by the auxiliary film on side walls of the first etch mask patterns. First auxiliary film patterns are formed by removing the auxiliary film formed on the first etching mask patterns. Each first auxiliary film pattern has opposite ends projecting upwardly while lower parts of both the ends are connected to each other. The first etching mask patterns and the second etch mask patterns are removed. Second auxiliary film patterns are formed by etching between the ends of the first auxiliary film patterns such that the opposite ends of the first auxiliary film patterns are isolated from each other. COPYRIGHT: (C)2009,JPO&INPIT
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