| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses a decline in an output signal in a pass transistor, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a first transistor 20 having a first gate electrode 30a, a second transistor 14 having a second gate electrode 30b, and a third transistor 16 which has a third gate electrode 30c, and in which a threshold voltage is lower than that of the second transistor. A peak concentration of a first conductive type impurity just below a central portion of the first gate electrode is lower than a peak concentration of a first conductive type impurity just below a central portion of the second gate electrode, and equals to or less than a peak concentration of a first conductive type impurity just below a central portion of the third gate electrode. A peak concentration of a first conductive type impurity just below an edge of the first gate electrode is higher than a peak concentration of a first conductive type impurity just below an edge of the second gate electrode, and higher than a peak concentration of a first conductive type impurity just below an edge of the third gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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