| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting laser diode formed of a nitride semiconductor, which is capable of constricting a current, and to provide a manufacturing method of the same. SOLUTION: The surface-emitting laser diode has: an active layer 30 formed of a nitride semiconductor; a first reflection film 20 disposed parallel to the principal plane of the active layer 30; a current constriction layer 40 formed of a nitride semiconductor, which is disposed opposite to the first reflection film 20 with the active layer 30 between and has a cross-sectional area parallel to the principal plane of the active layer 30, which is smaller than that of the active layer 30; and a second reflection film 50 which is disposed opposite to the first reflection film 20 with the active layer 30 and the current constriction layer 40 between and has a cross-sectional area parallel to the principal plane of the active layer 30, which is larger than that of the current constriction layer 40. COPYRIGHT: (C)2009,JPO&INPIT
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