| 摘要 |
Methods of forming capping structures on one or more different material surfaces are provided. One embodiment includes disposing a semiconductor structure in a reduced pressure chamber, forming a capping GCIB within the reduced pressure chamber, and directing the capping GCIB onto at least one of the one or more different material surfaces, so as to form at least one capping structure on the one or more surfaces onto which the capping GCIB is directed.
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