| 摘要 |
PROBLEM TO BE SOLVED: To improve data retaining characteristic at writing, in a memory device of resistance varying type. SOLUTION: A memory layer 17 comprising a high-resistance layer 17A and an ion source layer 17B is provided between a lower electrode 14 and an upper electrode 18. The ion source layer 17B contains an O (oxygen) as an additional element together with an ion conductive material such as an S (sulfur), Se (selenium) and Te (tellurium) (chalcogenide element) and a metal element, which ionize, such as a Zr (zirconium). Since the oxygen is contained in the ion source layer 17B, retention performance for a high resistance condition at writing is improved. COPYRIGHT: (C)2009,JPO&INPIT |
