| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in order to improve a profile and CD uniformity of a pad pattern. SOLUTION: The method for manufacturing the semiconductor device includes the steps of: forming a first mask pattern on a layer to be etched; forming a second mask pattern on the layer to be etched; forming a spacer on the sidewalls of the first mask pattern and the second mask pattern; and etching the layer to be etched on the basis of an etching mask in which the second mask pattern was removed. COPYRIGHT: (C)2009,JPO&INPIT |
