| 摘要 |
PROBLEM TO BE SOLVED: To improve carrier mobility in a channel region, without causing film cracking on a stress liner film or the like. SOLUTION: In a semiconductor device, a sidewall 107 is provided beside the side face of a gate electrode 103 of an NMOS transistor. The height of the sidewall 107 is 1/3 or lower the height of the gate electrode 103, and the width at the upper surface of a semiconductor substrate 100 is equal to or less than the gap between the gate electrode 103 and an n-type source region or n-type drain region 108. A stress liner film 111 having a tensile stress of 1.7 GPa or larger is so provided on the upper surface of the semiconductor substrate as to cover the gate electrode 103 and the sidewall 107. The thickness of the film is 25 nm or larger. COPYRIGHT: (C)2009,JPO&INPIT
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