| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating semiconductor device which can control processing damages, when an insulating film is etched, using a metal material as a hard mask. SOLUTION: A fabrication process of a semiconductor device includes a step S104 for forming an insulating film on a base; a step S108 for forming a film containing a metal on the insulating film, a step S110 for forming a film containing Si and C or N and C on the film containing a metal; a step S118 for etching the film containing carbon selectively; a step S126 for etching the film containing a metal selectively such that an opening formed by etching is transferred; and a step S128 for etching the insulating film using the film containing carbon and the film containing a metal as a mask, in a state where the surface different from the opening of the film containing carbon is exposed. COPYRIGHT: (C)2009,JPO&INPIT
|
