发明名称 MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
摘要 This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability.
申请公布号 US2009184321(A1) 申请公布日期 2009.07.23
申请号 US20080190015 申请日期 2008.08.12
申请人 TSAI CHENG-JU;CHEN BO-CHU;SHIH DING-KANG;HUANG JUNG-JIE;YEH YUNG-HUI 发明人 TSAI CHENG-JU;CHEN BO-CHU;SHIH DING-KANG;HUANG JUNG-JIE;YEH YUNG-HUI
分类号 H01L29/04;H01L21/336 主分类号 H01L29/04
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