RECESS GATE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a recess gate and a method of manufacturing a semiconductor device including the same. SOLUTION: The recess gate of the semiconductor device includes a substrate 110, a metal layer 165, a polysilicon layer, and a source region and a drain region formed adjacent to the polysilicon layer and spaced from the metal layer 165. The method for manufacturing the semiconductor device includes steps of: forming a source/drain layer 120 on the substrate 110; forming a recess 112 to form a first conductive pattern 145; forming a second conductive layer on the first conductive layer pattern 145; forming a second conductive layer pattern 156 to overlap the source/drain layer 120; depositing an insulating layer on the second conductive layer pattern 156 and the source/drain layer 120; and planarizing the insulating layer to form a cap on the second conductive layer pattern 156. COPYRIGHT: (C)2009,JPO&INPIT