| 摘要 |
PROBLEM TO BE SOLVED: To provide: an epitaxial wafer having a gettering layer having high gettering capability without adversely affecting quality of a device active layer even when the gettering layer is formed in the vicinity of the device active layer; and a method of producing the same. SOLUTION: A gettering epitaxial film 40 containing silicon and carbon is formed (Fig.1 (c)) on a silicon substrate 20 (Fig.1 (a)) or a silicon epitaxial base film 30 (Fig.1 (b)) formed on the silicon substrate 20 as needed. The gettering epitaxial film 40 is characterized in that carbon atom concentration is 5.0×10<SP>17</SP>-1.0×10<SP>21</SP>atoms/cm<SP>3</SP>, and carbon atoms are present among silicon lattices. COPYRIGHT: (C)2009,JPO&INPIT |
