发明名称 SEMICONDUCTOR SENSOR AND METHOD FOR MANUFACTRUING THE SAME
摘要 A semiconductor sensor includes: a semiconductor substrate; a plurality of piezoelectric thin films layered on the semiconductor substrate, the plurality of piezoelectric thin films including at least a pair of the piezoelectric thin films layered above and below; a pair of electrodes that are formed at an interface of at least the pair of the piezoelectric thin films layered above and below and excite surface acoustic waves; a thin film directly under a lowest-layer piezoelectric film of the piezoelectric thin films; a metal thin film that is formed at an interface of the lowest-layer piezoelectric thin film and the thin film, and facilitate a growth of a ridge-and-valley portion on a surface of an uppermost-layer piezoelectric thin film of the piezoelectric thin films; and a sensitive film for molecular adsorption formed on at least the ridge-and-valley portion on the uppermost-layer piezoelectric thin film.
申请公布号 US2009184381(A1) 申请公布日期 2009.07.23
申请号 US20080336846 申请日期 2008.12.17
申请人 SEIKO EPSON CORPORATION 发明人 TAKIZAWA TERUO;KONDO TAKAYUKI;TODOROKIHARA MASAYOSHI
分类号 G01N37/00;H01L21/02;H01L41/04;H01L41/22 主分类号 G01N37/00
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