发明名称 |
SEMICONDUCTOR SENSOR AND METHOD FOR MANUFACTRUING THE SAME |
摘要 |
A semiconductor sensor includes: a semiconductor substrate; a plurality of piezoelectric thin films layered on the semiconductor substrate, the plurality of piezoelectric thin films including at least a pair of the piezoelectric thin films layered above and below; a pair of electrodes that are formed at an interface of at least the pair of the piezoelectric thin films layered above and below and excite surface acoustic waves; a thin film directly under a lowest-layer piezoelectric film of the piezoelectric thin films; a metal thin film that is formed at an interface of the lowest-layer piezoelectric thin film and the thin film, and facilitate a growth of a ridge-and-valley portion on a surface of an uppermost-layer piezoelectric thin film of the piezoelectric thin films; and a sensitive film for molecular adsorption formed on at least the ridge-and-valley portion on the uppermost-layer piezoelectric thin film.
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申请公布号 |
US2009184381(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
US20080336846 |
申请日期 |
2008.12.17 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
TAKIZAWA TERUO;KONDO TAKAYUKI;TODOROKIHARA MASAYOSHI |
分类号 |
G01N37/00;H01L21/02;H01L41/04;H01L41/22 |
主分类号 |
G01N37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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