Light-Emitting Diode, Package Structure Thereof and Manufacturing Method for the Same

摘要

A light-emitting diode includes a sapphire substrate, an n-type semiconductor, a light-emitting layer, a p-type semiconductor layer, an anode and a conductive material. The n-type semiconductor layer is formed on the sapphire substrate and has a side surface, a center section and an edge around the center portion. The light-emitting layer is formed on the n-type semiconductor layer. The p-type semiconductor layer is formed on the light-emitting layer. The anode is formed on the p-type semiconductor layer. The conductive material is formed on the bottom surface of the sapphire substrate and is in contact with the n-type semiconductor layer.