| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress formation of a void as a connection defect caused by trapping of a gas in a connection layer by eliminating the need of working, such as, grooving on the reverse surface of a semiconductor element, even when a semiconductor is connected using a conductive adhesive producing an extremely large amount of gas. <P>SOLUTION: A connection layer for connecting the semiconductor element 1 and a base material 2c has a laminated structure of an air gap layer 13 and a bonding layer 7, and consequently, a gas can be dissipated efficiently d to the outside of the connection layer in a process of connection. <P>COPYRIGHT: (C)2009,JPO&INPIT |
