MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which includes a step where the temperature can be lowered so as to be able to remove a natural oxide film by reduction.

SOLUTION: The manufacturing method of a semiconductor device includes a step (a) of preparing a substrate having at least a silicon surface layer, a step (b) of forming a natural oxide film having a thickness of 0.1 to 0.5 nm on a surface of the silicon surface layer, a step (c) of removing the natural oxide film by reduction through hydrogen annealing, and a step (d) of forming a gate insulating film on the surface of the silicon surface layer subsequently to the step (c).

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