| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor improving a breakdown voltage while maintaining a high-speed operation, and to provide a semiconductor integrated circuit device using the MOS transistor. SOLUTION: There is provided a MOS transistor Tr having plural stripe shaped transistor cells in which drains D and sources S are arranged at both sides of extending gates G, characterized by arranging a back gate BG which includes the plural transistor cells and has plural transistor cell blocks CB to whose both ends the sources S are arranged and extends outside the sources S at both ends of the transistor cell block CB. COPYRIGHT: (C)2009,JPO&INPIT
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