发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A semiconductor device is provided which has a semiconductor substrate. An active cell area having at least one active cell is formed in the semiconductor substrate, wherein at least sections of the active cell area are surrounded by an edge termination region. An integrated gate runner structure is arranged at least partially in the edge termination region and has at least one low electrical resistance portion and at least one high electrical resistance portion which are electrically connected in series with each other.
申请公布号 US2009184373(A1) 申请公布日期 2009.07.23
申请号 US20080016478 申请日期 2008.01.18
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 KAINDL WINFRIED;TREU MICHAEL;KAPELS HOLGER;TOLKSDORF CAROLIN;WILLMEROTH ARMIN
分类号 H01L29/00;H01L21/3205 主分类号 H01L29/00
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