| 摘要 |
PROBLEM TO BE SOLVED: To perform etching of a desired amount of etching with superior reproducibility by monitoring the amount of etching, while performing the etching processing of a SiC substrate. SOLUTION: The etching processing method includes (a) a step of performing etching processing of the surface of a SiC substrate 2, both surfaces of which have been mirror-polished with reactive plasma, and at the same time, irradiating the surface or the backside of the SiC substrate 2 with a laser light 14. Then, the method is also provided with (b) a step of detecting the light intensity of the laser light 14, reflected from both the surface and the backside of the SiC substrate 2, calculating an amount of etching, based on an interference waveform indicated by the detected light intensity, and stopping the etching processing in the step (a), when the amount of etching reaches a desired amount of etching. COPYRIGHT: (C)2009,JPO&INPIT
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