发明名称 ELECTRON BEAM LITHOGRAPHY APPARATUS AND ELECTRON BEAM LITHOGRAPHY METHOD
摘要 PROBLEM TO BE SOLVED: To perform patterning of a sample precisely by correcting the position of a sample being irradiated with an electron beam. SOLUTION: While patterning is performed on the surface of a substrate W, deviation information is delivered from a position controller 74 to a position correction control circuit 72. The position correction control circuit 72 corrects the irradiation position of an electron beam on the substrate W by deflecting the electron beam principally based on deviation information from which a rotary synchronous vibration component resulting from a rotation mechanism 32 constituting a rotary table unit 30, and a vibration component resulting from movement of a moving stage caused by a slide unit 33 are removed. Consequently, variation in irradiation position of an electron beam based on a vibration transmitted from the outside of an apparatus, e.g., from the floor surface on which an electron beam lithography apparatus 100 is mounted, can be corrected efficiently and thereby the substrate W can be patterned precisely. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009164159(A) 申请公布日期 2009.07.23
申请号 JP20070339150 申请日期 2007.12.28
申请人 RICOH CO LTD 发明人 KAWAMURA YUMIKO
分类号 H01L21/027;G03F7/20;G11B5/84;G11B7/26;H01J37/305 主分类号 H01L21/027
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