发明名称 |
Resistive memory devices and methods of manufacturing the same |
摘要 |
A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.
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申请公布号 |
US2009184305(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
US20080230223 |
申请日期 |
2008.08.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-BUM;PARK YOUNG-SOO;LEE MYUNG-JAE;WENXU XIANYU;KANG BO-SOO;AHN SEUNG-EON;KIM KI-HWAN |
分类号 |
H01L47/00;H01L21/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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