| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, for reducing a defect occurrence rate in chip division and improving an yield. <P>SOLUTION: The method of manufacturing the semiconductor device includes: a dislocation density evaluation process of measuring the dislocation density of a cross section crossing a main surface in a GaN substrate and selecting the GaN substrate for which the dislocation density is equal to or lower than a fixed numerical value; and a division process of laminating a functional element part on the GaN substrate selected in the dislocation density evaluation process and then dividing it in a chip shape. Occurrence of chipping, burrs and cracking when forming an epitaxial layer and an electrode, etc., on the GaN substrate and then dividing it in the chip shape is deeply related to the defect density of the GaN substrate, especially the defect density in a lateral direction. Thus, by measuring the dislocation density of the cross section crossing the main surface equivalent to the defect density in the lateral direction, selecting the GaN substrate for which the dislocation density is equal to or lower than the fixed numerical value and using it, the yield of the semiconductor device is improved. <P>COPYRIGHT: (C)2009,JPO&INPIT |
