| 摘要 |
PROBLEM TO BE SOLVED: To provide: an image sensor having excellent physical and electrical contact force between a photodiode and an interconnection while increasing a fill factor and a manufacturing method thereof; an image sensor and a manufacturing method thereof, which cause no charge sharing phenomenon while increasing a fill factor; and an image sensor and a manufacturing method thereof, which can prevent saturation and deterioration of sensitivity by providing a smooth movement path for photocharges between the photodiode and the readout circuitry to minimize a dark current source. SOLUTION: The image sensor includes the interconnection 150 and the readout circuitry 120 formed on a first substrate 100, a metal layer 160 formed on the interconnection 150, and an image sensing part electrically connected to the metal layer 160 containing a first conduction type conduction layer and a second conduction type conduction layer. COPYRIGHT: (C)2009,JPO&INPIT
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