| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a compound semiconductor by which the resistance of a p-type AlGaN-based superlattice structure can be reduced, and to provide a semiconductor laser diode, and an AlGaN-based superlattice structure. SOLUTION: In the manufacturing method of the compound semiconductor provided with the AlGaN-based superlattice structure which contains Mg and indicates p-type conductivity, and for which an AlGaN layer of a film thickness near the de Broglie wavelength of holes and a GaN layer of the film thickness near the de Broglie wavelength of holes are alternately laminated, an Mg raw material is not supplied, when growing the AlGaN layer, and the supply time t<SB>Mg</SB>of the Mg raw material to be supplied, when growing the GaN layer is set shorter than the growing time t<SB>W</SB>of the GaN layer. COPYRIGHT: (C)2009,JPO&INPIT
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