| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that is manufactured in a simplified way and also inexpensively stabilizing the direction of polarization of the laser light to direct in one direction while providing a high power. SOLUTION: The surface-emitting semiconductor laser includes, on a substrate 10, a lamination structure 20 provided with: a lower first DBR layer 12; a lower second DBR layer 13; a lower cladding layer 14; an active layer 15; an upper cladding layer 16; a current constriction layer 17; an upper DBR layer 18; and a contact layer 19, which are stacked in the above-described order. The lower first DBR layer 12 has an oxidized portion 30 in one region out of opposite regions to a current injection region 17B, and anisotropic stress corresponding to an non-uniform distribution of the oxidized portion 30 is generated in an active layer 15, and further an optical field intensity distribution of a basic lateral mode gravitates in a direction of the oxidized portion 30. COPYRIGHT: (C)2009,JPO&INPIT
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