发明名称 DEVICE, METHOD AND SUBSTRATE FOR FORMING CRYSTALLINE SEMICONDUCTOR FILM
摘要 PROBLEM TO BE SOLVED: To radiate a laser from a glass substrate rear surface efficiently in obtaining a polycrystalline silicon film by heating and melting an amorphous silicon film formed on a glass substrate with light such as the laser and then crystallizing. SOLUTION: The glass substrate 5 is arranged with an amorphous silicon film 51 side turned downward. A laser 2 for heating is radiated from above on the glass substrate 5 from an upper surface side through an objective optical device 6, and is imaged on the amorphous silicon film 51. A position of the amorphous silicon film 51 is measured by a height sensor 1 for focusing to image. A laser for measurement is radiated from an upper side of the glass substrate 5 and is reflected on an upper surface and lower surface of the glass substrate 5. A confocal measurement system is used in measuring the position. The position of the amorphous silicon film 51 is measured by using light reflecting on the lower surface of the glass substrate 5, and the radiated light is focused based on the position. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009164444(A) 申请公布日期 2009.07.23
申请号 JP20080001871 申请日期 2008.01.09
申请人 MARUBUN CORP 发明人 NAKADA SATOKI;YAMAOKA YUTAKA
分类号 H01L21/20;H01L21/268 主分类号 H01L21/20
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