| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is a highly integrated circuit such as SRAM which can reduce leakage current (standby current) without lowering the switching speed, and to provide a manufacturing method of the same. SOLUTION: The semiconductor device has a first transistor structure Q1 and a second transistor structure Q2 which share a source-drain region 15b. A gate electrode 20 of the first transistor structure Q1 is formed of W (tungsten) while a gate electrode 10 of the second transistor structure Q2 is formed of n-type Si. Since W (tungsten) has a work function larger than that of n-type Si, the threshold voltage of the first transistor structure Q1 is higher than that of the second transistor structure Q2. COPYRIGHT: (C)2009,JPO&INPIT
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