| 发明名称 |
FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL |
| 摘要 |
A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
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| 申请公布号 |
US2009184089(A1) |
申请公布日期 |
2009.07.23 |
| 申请号 |
US20080338950 |
申请日期 |
2008.12.18 |
| 申请人 |
LAM RESEARCH CORPORATION |
发明人 |
CHEBI ROBERT;LIN FRANK;WINNICZEK JAROSLAW W.;CHEN WAN-LIN;MCDONNELL ERIN;ZHENG LILY;LASSIG STEPHAN;BOGART JEFF;RUSU CAMELIA |
| 分类号 |
B44C1/22;C23F1/08 |
主分类号 |
B44C1/22 |
| 代理机构 |
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