| 摘要 |
A wafer dividing method for dividing a wafer into individual devices, the front side of the wafer being formed with a plurality of crossing streets for partitioning a plurality of areas where the devices are respectively formed. The wafer dividing method includes the steps of coating the front side of the wafer with a protective film, cutting the front side of the wafer with the protective film along the streets to form a plurality of kerfs each having a depth corresponding to the finished thickness of each device, removing chipping from each kerf by plasma etching, attaching a protective tape to the front side of the wafer, grinding the back side of the wafer to expose each kerf to the back side of the wafer, thereby dividing the wafer into the individual devices, and removing a grinding strain from the back side of the wafer.
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