发明名称 REDUNDANT CHAIN TEST STRUCTURE FOR PRECISE CONTACT/VIA FAIL RATE MEASUREMENT
摘要 The present invention relates to a chain test structure with first pattern of electrically conductive segments on a first level, a second pattern of electrically conductive segments on a second level at a larger distance from the substrate than the first level, a via pattern with via elements, which respectively connect selected pairs of the first and second segments to form a series connection of first and second segments that alternates between the first and the second levels, and -a third pattern of conductive segments on a third level, which third pattern repeats the second pattern of the second segments. The third segments are connected with their respective corresponding second segment by at least one respective via pair to form respective parallel connections of pairs of one second and one corresponding third conductive segment. The chain test structure allows a precise measurement of a contact or via fail rate.
申请公布号 WO2009090517(A2) 申请公布日期 2009.07.23
申请号 WO2008IB55565 申请日期 2008.12.29
申请人 NXP B.V.;DE VRIES, DIRK, KENNETH 发明人 DE VRIES, DIRK, KENNETH
分类号 H01L23/544 主分类号 H01L23/544
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