SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent information written in a ferroelectric memory from being disappeared due to heating processing in a manufacturing process of the ferroelectric memory.

SOLUTION: A semiconductor memory device (10) provided with a ferroelectric memory (102) is provided with a nonvolatile memory (103) in which data holding capability under high temperature is higher than a ferroelectric memory (102), and a connection circuit (104) switching connection and non-connection of the ferroelectric memory (102) and the nonvolatile memory (103). The ferroelectric memory (102) receives at least a part of exclusive data of the device written in the nonvolatile memory (103) through the connection circuit (104) and holds it.

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