发明名称 |
Semiconductor Power Device with Bias Circuit |
摘要 |
An RF power circuit comprises a power transistor having a gate and drain, an output matching network coupled to the drain and an input matching network coupled to the gate. A closed-loop bias circuit is integrated with the power transistor on the same die and coupled to the gate for biasing the RF power transistor based on a reference voltage applied to the bias circuit.
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申请公布号 |
US2009184756(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
US20080015890 |
申请日期 |
2008.01.17 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
BLAIR CYNTHIA;PERUGUPALLI PRASANTH |
分类号 |
G05F1/10;H01L21/60;H01L23/50 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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